K4A4G165WE-BIWE DDR4 4GB
Samsung DDR4 4GB Memory Chip K4A4G165WE-BIWE
Architecture: 256M x16
Speed: 3200Mbps
Operating Voltage: 1.2V
Operating Temperature: -40°C ~ +95°C
Package: 96FBGA
Production Status: Mass Production
产品详情
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Samsung DDR4 4GB Memory Chip K4A4G165WE-BIWE
Architecture: 256M x16
Speed: 3200Mbps
Operating Voltage: 1.2V
Operating Temperature: -40°C ~ +95°C
Package: 96FBGA
Production Status: Mass Production
none